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HCF4015B 数据表(PDF) 5 Page - STMicroelectronics |
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HCF4015B 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25 °C, CL = 50 pF, RL = 200 kΩ, typical temperature coefficient for all VDD values is 0.3 %/°C, all input rise and fall times = 20 ns) Val ue Symbol Parameter Test Conditions V DD (V) Min. Typ. Max. Unit CLOCKED OPERATI ON t PLH,tPHL Propagation Delay Time (carry out or decoded out lines) 5160 320 ns 10 80 160 15 60 120 t THL ,tTLH Transition Time (carry out or decoded out lines) 5100 200 ns 10 50 100 15 40 80 f CL Maximum Clock Input Frequency 5 3 6 MHz 10 6 12 15 8.5 17 t W Clock Pulse Width 5 180 90 ns 10 80 40 15 50 25 t r,tf* Clock Input Rise or Fall Time 5 15 µs 10 15 15 15 t se tup Data Setup Time 5 70 35 ns 10 40 20 15 30 15 RESET OPERATI ON t PLH,tPHL Propagation Delay Time 5 200 400 ns 10 100 200 15 80 160 t W Reset Pulse Width 5 200 100 ns 10 80 40 15 60 30 * If more than unit is cascaded in the parallel clocked application, trCL should be made less than or equal to the sum of the fixed propagation delay at 15pF and the transition time of the carry output driving stage for the estimated capacitive load. HCC/HCF4015B 5/12 |
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