LM5145 datasheet(2/73 Pages) TI2

2 / 73 page

Several features are included to simplify compliance with CISPR 11 and CISPR 32 EMI requirements. Adaptively

timed, high-current MOSFET gate drivers minimize body diode conduction during switching transitions, reducing

switching losses and improving thermal and EMI performance at high input voltage and high switching

frequency. To reduce input capacitor ripple current and EMI filter size, 180° interleaved operation is provided

for two outputs. A 90° out-of-phase clock output works well for cascaded, multichannel or multiphase power

stages. Resistor-adjustable switching frequency as high as 2.2MHz can be synchronized to an external clock

source up to 2.64MHz to eliminate beat frequencies in noise-sensitive applications.

Additional features of the LM25137 include 150°C maximum junction temperature operation, user-selectable

PFM mode for lower current consumption during light-load conditions, configurable soft-start function, open-drain

PG flags for fault reporting and output monitoring, independent enable inputs, monotonic start-up into prebiased

loads, integrated VCC bias supply regulator powered from VIN or VOUT1, hiccup-mode overload protection,

and thermal shutdown protection with automatic recovery. Current is sensed using the inductor DCR for highest

efficiency or an optional shunt resistor for high accuracy.

The LM25137 controller comes in a 6mm × 6mm, thermally-enhanced, 36-pin VQFN package with additional

pin clearance for increased reliability and wettable flank pins to facilitate optical inspection during manufacturing.

The wide input voltage range, low quiescent current consumption, high-temperature operation, cycle-by-cycle

current limit, low EMI signature, and small design size provide an excellent point-of-load regulator choice for

applications requiring enhanced robustness and durability.

LM25137

SNVSCU4 – OCTOBER 2025

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LM5145 数据表(PDF) 2 Page - Texas Instruments