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STTH10LCD06 数据表(PDF) 2 Page - STMicroelectronics |
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STTH10LCD06 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Characteristics STTH10LCD06 2/11 DocID15858 Rev 3 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.20 x IF(AV) + 0.040 IF 2 (RMS) Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise stated) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current DPAK 18 A TO-220FPAC 35 IF(AV) Average forward current, δ = 0.5, square wave DPAK Tc = 105° C 10 A TO-220FPAC Tc = 55° C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature(1) 175 °C 1. condition to avoid thermal runaway for a diode on its own heatsink dP to t dT j --------------- 1 R th j a – () -------------------------- < Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case DPAK 3.5 °C/W TO-220FPAC 6 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 5 µA Tj = 150° C 13 130 VF (2) Forward voltage drop Tj = 25° C IF = 10 A 2 V Tj = 150° C 1.3 1.6 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% |
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