| 数据搜索系统,热门电子元器件搜索 |
|
STTH1506D 数据表(PDF) 2 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STTH1506D 数据表(HTML) 2 Page - STMicroelectronics |
|
2 / 5 page ![]() STTH1506DPI 2/5 Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR* Reverse leakage current VR =VRRM Tj = 25°C 20 µA Tj = 125°C 30 200 VF** Forward voltage drop IF = 15A Tj=25 °C 3.6 V Tj = 150°C 1.95 2.4 Pulse test: * tp = 100ms, δ <2% ** tp = 380µs, δ <2% To evaluate the maximum conduction losses use the following equation: P=1.7xIF(AV) + 0.047 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter Test conditions Value Unit Rth (j-c) Junction to case 1.6 °C/W THERMAL AND POWER DATA Symbol Parameter Tests Conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 0.5 A Irr = 0.25A IR =1A Tj = 25°C 16 ns IF =1A dIF/dt = - 50A/µs VR =30V 35 IRM Reverse recovery current VR = 400 V IF =15A dIF/dt = -200 A/µs Tj = 125°C 4.8 6.0 A S Reverse recovery softness factor 0.4 - Qrr Reverse recovery charges 80 nC RECOVERY CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit tfr Forward recovery time IF =15A dIF/dt = 100A/µs, VFR =1.1xVFmax Tj = 25°C 200 ns VFP Forward recovery voltage IF =15A dIF/dt = 100 A/µs Tj = 25°C 6V TURN-ON SWITCHING CHARACTERISTICS |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |