1

Characteristics

Table 1. Absolute ratings (limiting values, per diode at Tamb = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

300

V

IF(RMS)

Forward rms current

180

A

IF(AV)

Average forward current, δ = 0.5, square wave

TC = 110 °C

100

A

TC = 90 °C

200

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

1000

A

Tstg

Storage temperature range

-55 to +150

°C

Tj

Maximum operating junction temperature

150

°C

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

0.55

°C/W

Total

0.35

Rth(c)

Coupling

0.1

When the diodes 1 and 2 are used simultaneously:

Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = 300 V

-

200

µA

Tj = 125 °C

-

0.2

2

mA

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 100 A

-

1.20

V

Tj = 150 °C

-

0.80

0.95

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses, use the following equation:

P = 0.75 x IF(AV) + 0.0020 x IF 2 (RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STTH20003

Characteristics

DS1796 - Rev 3

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