Characteristics

STTH20L03C

2/13

DocID023115 Rev 2

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

300

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current

δ = 0.5, square wave

TC = 155 °C

Per diode

10

A

TC = 150 °C

Per device

20

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal

150

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature range

-40 to +175

°C

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

1.5

°C/W

Total

1.0

Rth(c)

Coupling

0.5

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

10

µA

Tj = 125 °C

-

10

100

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-

0.95

1.2

V

Tj = 125 °C

-

0.8

0.95

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.8 x IF(AV) + 0.015 x IF2(RMS)