25

50

75

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

Tj(°C)

IRM

S factor

Fig. 7: Relative variation of dynamic parameters

versus junction temperature (reference: Tj = 125°C).

0

50

100 150 200 250 300 350 400 450 500

0

1

2

3

4

5

6

7

8

VFP(V)

IF=IF(av)

Tj=125°C

dIF/dt(A/µs)

Fig. 8: Transient peak forward voltage versus

dIF/dt (90% confidence, per diode).

0

50

100 150 200 250 300 350 400 450 500

0

50

100

150

200

250

300

350

400

450

500

tfr(ns)

VFR=1.1*VF max.

IF=IF(av)

Tj=125°C

dIF/dt(A/µs)

Fig. 9: Forward recovery time versus dIF/dt (90%

confidence, per diode).

STTH3003CW

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