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STTH506D 数据表(PDF) 2 Page - STMicroelectronics |
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STTH506D 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() STTH506DTI 2/5 Symbol Parameter Test conditions Value Unit Rth (j-c) Junction to case thermal resistance 3.0 °C/W THERMAL AND POWER DATA Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current VR =VRRM Tj = 25°C 6µA Tj = 125°C 860 VF ** Forward voltage drop IF = 5 A Tj=25 °C 3.6 V Tj = 150°C 1.95 2.4 Pulse test : * tp = 100 ms, δ <2% ** tp = 380 µs, δ <2% To evaluate the maximum conduction losses use the following equation : P=1.7xIF(AV) + 0.14 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 0.5 A Irr = 0.25 A IR =1A Tj = 25°C 12 ns IF =1A dIF/dt=-50 A/µs VR =30V 25 IRM Reverse recovery current VR = 400 V IF =5A dIF/dt = -200 A/µs Tj = 125°C 3.6 4.5 A S Reverse recovery softness factor 0.4 - Qrr Reverse recovery charges 45 nC DYNAMIC CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit tfr Forward recovery time IF =5A dIF/dt = 100 A/µs VFR =1.1xVF max Tj = 25°C 100 ns VFP Transient peak forward recovery voltage IF =5A dIF/dt = 100 A/µs Tj = 25°C 7V TURN-ON SWITCHING CHARACTERISTICS |
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