STTH8003CY

4/5

25

50

75

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Tj(°C)

IRM

S factor

Fig. 7: Relative variation of dynamic parameters

versus junction temperature (Reference: Tj = 125°C)

0

50

100 150 200 250 300 350 400 450 500

0

100

200

300

400

500

dIF/dt(A/µs)

tfr(ns)

IF=IF(av)

VFR=1.1 x VFmax

Tj=125°C

Fig. 9: Forward recovery time versus dIF/dt

(90% confidence, per diode)

0

50

100 150 200 250 300 350 400 450 500

0

2

4

6

8

10

dIF/dt(A/µs)

VFP(V)

IF=IF(av)

Tj=125°C

Fig. 8: Transient peak forward voltage versus

dIF/dt (90% confidence, per diode)