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STTH8L06FP 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH8L06FP
功能描述  Turbo 2 ultrafast high voltage rectifier
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH8L06FP 数据表(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH8L06
4/11
Doc ID 8373 Rev 6
Figure 7.
Reverse recovery charges
versus dIF/dt (typical values)
Figure 8.
Softness factor versus
dIF/dt (typical values)
0
100
200
300
400
500
600
700
800
900
1000
0
20
40
60
80
100
120
140
160
180
200
Q (nC)
rr
I =2 x I
F
F(AV)
I=I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125°C
R
j
dI /dt(A/µs)
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
25
50
75
100
125
150
175
200
S factor
I
2 x I
T =125°C
F
F(AV)
j
≤
V =400V
R
dI /dt(A/µs)
F
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
Figure 10.
Transient peak forward voltage
versus dIF/dt (typical values)
0.00
0.25
0.50
0.75
1.00
1.25
25
50
75
100
125
IRM
QRR
S factor
T (°C)
j
I
2 x I
Reference: T =125°C
F
F(AV)
j
≤
V =400V
R
0
1
2
3
4
5
6
7
0
20
40
60
80
100
120
140
160
180
200
V
(V)
FP
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
Figure 11.
Forward recovery time versus
dIF/dt (typical values)
Figure 12.
Junction capacitance versus
reverse voltage applied (typical
values)
0
50
100
150
200
250
300
0
20
40
60
80
100
120
140
160
180
200
t (ns)
fr
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
V
=1.1 x V max.
FR
F
1
10
100
1000
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j



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