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STPSC10H065DI 数据表(PDF) 2 Page - STMicroelectronics |
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STPSC10H065DI 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 17 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current 22 A IF(AV) Average forward current TO-220AC, DPAK, D²PAK, TC = 135 °C, DC (1) 10 A TO-220AC Ins, TC = 85 °C, DC(1) IFRM Repetitive peak forward current TO-220AC, DPAK, D²PAK, Tc = 135 °C, Tj = 175 °C, δ = 0.1(1) 41 A TO-220AC Ins, Tc = 85 °C, Tj = 175 °C, δ = 0.1(1) IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C 90 A tp = 10 ms sinusoidal, Tc = 125 °C 80 tp = 10 µs square, Tc = 25 °C 470 Tstg Storage temperature range -55 to +175 °C Tj Operating junction temperature range(2) -40 to +175 °C 1. Value based on Rth(j-c) max. 2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit Rth(j-c) Junction to case TO-220AC, DPAK, D²PAK 1.25 1.5 °C/W TO-220AC Ins. 2.1 3.5 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM - 9 100 µA Tj = 150 °C - 85 425 VF (2) Forward voltage drop Tj = 25 °C IF = 10 A - 1.56 1.75 V Tj = 150 °C - 1.98 2.5 1. Pulse test: tp = 10 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) + 0.115 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode STPSC10H065 Characteristics DS9226 - Rev 8 page 2/17 |
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