Table 4. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

QCj (1)

Total capacitive charge

VR = 800 V

-

202

-

nC

Cj

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

-

3078

-

pF

VR = 800 V, Tc = 25 °C, F = 1 MHz

-

141

-

1.

Most accurate value for the capacitive charge:

QcjVR = ∫0VRCjVdV

Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test)

VCL_DUT

IAS

i(t), v(t)

t

tp

IDUT

IL

Figure 2. Thermal transient impedance model circuit of the diode – Zth(j-c)

Table 5. Components typical values of the diode thermal transient impedance model Zth(j-c)

Ref.

Value (K/W)

Ref.

Value (J/K)

Rth1

11.3m

Cth1

3.52m

Rth2

63.6m

Cth2

4.04m

Rth3

89.7m

Cth3

18.5m

Rth4

66m

Cth4

87.2m

Rth5

19.4m

Cth5

1.13

STPSC40G12

Characteristics

DS14116 - Rev 1

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