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TPS2553DBVT 数据表(PDF) 7 Page - Texas Instruments

部件名 TPS2553DBVT
功能描述  TPS255xx Precision Adjustable Current-Limited Power-Distribution Switches
PDF  44 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

TPS2553DBVT 数据表(HTML) 7 Page - Texas Instruments

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TPS2552, TPS2553, TPS2552-1, TPS2553-1
www.ti.com
SLVS841F – NOVEMBER 2008 – REVISED AUGUST 2016
Product Folder Links: TPS2552 TPS2553 TPS2552-1 TPS2553-1
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
(1)
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
7.5 Electrical Characteristics
over recommended operating conditions, VEN = 0 V, or VEN = VIN, RFAULT = 10 kΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS(1)
MIN
TYP
MAX
UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance
DBV package, TJ = 25°C
85
95
DBV package, –40°C
≤TJ ≤125°C
135
DRV package, TJ = 25°C
100
115
DRV package, –40°C
≤TJ ≤105°C
140
DRV package, –40°C
≤TJ ≤125°C
150
tr
Rise time, output
CL = 1 µF, RL = 100 Ω,
(see Figure 20)
VIN = 6.5 V
1.1
1.5
ms
VIN = 2.5 V
0.7
1
tf
Fall time, output
CL = 1 µF, RL = 100 Ω,
(see Figure 20)
VIN = 6.5 V
0.2
0.5
VIN = 2.5 V
0.2
0.5
ENABLE INPUT EN OR EN
Enable pin turn on/off threshold
0.66
1.1
V
IEN
Input current
VEN = 0 V or 6.5 V, VEN = 0 V or 6.5 V
–0.5
0.5
µA
ton
Turnon time
CL = 1 µF, RL = 100 Ω, (see Figure 20)
3
ms
toff
Turnoff time
CL = 1 µF, RL = 100 Ω, (see Figure 20)
3
ms
CURRENT LIMIT
IOS
Current-limit threshold (Maximum DC
output current IOUT delivered to load)
and Short-circuit current, OUT
connected to GND
RILIM = 15 kΩ, –40°C ≤TJ ≤105°C
1610
1700
1800
mA
RILIM = 20 kΩ
TJ = 25°C
1215
1295
1375
–40°C
≤TJ ≤125°C
1200
1295
1375
RILIM = 49.9 kΩ
TJ = 25°C
490
520
550
–40°C
≤TJ ≤125°C
475
520
565
RILIM = 210 kΩ
110
130
150
ILIM shorted to IN
50
75
100
tIOS
Response time to short circuit
VIN = 5 V (see Figure 21)
2
µs
REVERSE-VOLTAGE PROTECTION
Reverse-voltage comparator trip point
(VOUT – VIN)
95
135
190
mV
Time from reverse-voltage condition
to MOSFET turn off
VIN = 5 V
3
5
7
ms
SUPPLY CURRENT
IIN_off
Supply current, low-level output
VIN = 6.5 V, No load on OUT, VEN = 6.5 V or VEN = 0 V
0.1
1
µA
IIN_on
Supply current, high-level output
VIN = 6.5 V, No load on OUT
RILIM = 20 kΩ
120
140
µA
RILIM = 210 kΩ
100
120
µA
IREV
Reverse leakage current
VOUT = 6.5 V, VIN = 0 V
TJ = 25 °C
0.01
1
µA
UNDERVOLTAGE LOCKOUT
UVLO Low-level input voltage, IN
VIN rising
2.35
2.45
V
Hysteresis, IN
TJ = 25 °C
25
mV
FAULT FLAG
VOL
Output low voltage, FAULT
I/FAULT = 1 mA
180
mV
Off-state leakage
V/FAULT = 6.5 V
1
µA
FAULT deglitch
FAULT assertion or de-assertion due to overcurrent condition
5
7.5
10
ms
FAULT assertion or de-assertion due to reverse-voltage condition
2
4
6
ms
THERMAL SHUTDOWN
Thermal shutdown threshold
155
°C
Thermal shutdown threshold in
current-limit
135
°C
Hysteresis
10
°C



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