5.7 Typical Characteristics (continued)

For all voltage versions, at TJ = 25°C, VIN = VOUT(nom) + 0.5V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF, unless otherwise

noted.

40

35

30

25

20

15

10

5

0

0.2

V

V

(V)

–

IN

OUT

Frequency = 10kHz

C

= 10 µF

OUT

V

= 2.5V

I

= 100mA

OUT

OUT

0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Legacy silicon

Figure 5-25. PSRR (Ripple Rejection) vs VIN – VOUT

New silicon

Figure 5-26. PSRR (Ripple Rejection) vs VIN – VOUT

1

0.1

0.01

10

100

1k

10k

100k

Frequency (Hz)

C

OUT = 1 µF

C

OUT = 0 µF

C

OUT = 10 µF

I

OUT = 150mA

Legacy silicon

Figure 5-27. Noise Spectral Density CNR = 0μF

New silicon

Figure 5-28. Noise Spectral Density CNR = 0μF

1

0.1

0.01

10

100

1k

10k

100k

Frequency (Hz)

I

OUT = 150mA

C

OUT = 1 µF

C

OUT = 0 µF

C

OUT = 10 µF

Legacy silicon

Figure 5-29. Noise Spectral Density CNR = 0.01μF

New silicon

Figure 5-30. Noise Spectral Density CNR = 0.01μF

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TPS736

SBVS038X – SEPTEMBER 2003 – REVISED MAY 2025

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