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V1.0

08/06/20

High Power Silicon Power Transistor

VCEO 60V, IC 20A, 150W, TO-3

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Features

Forward Biased Second Breakdown Current Capability

2N3772 -- Is/b = 2.5 A DC @ V CE = 60 V DC

APPLICATIONS: Linear amplifiers, series pass regulators, and inductive switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Rating

Symbol

2N3772

Units

Collector - Emitter Voltage

VCEO

60

V DC

Collector - Emitter Voltage

VCEX

80

V DC

Collector - Base Voltage

VCB

100

V DC

Emitter Base Voltage

VEB

7

V DC

Collector Current - Continuous

Peak

IC

20

30

ADC

Base Current - Continuous

Peak

IB

5

15

ADC

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

150

0.855

Watts

W/°C

Operating and Storage Junction Temperature Range

TJ, Tstg

-65°C to +200°C

°C

Characteristic

Symbol

2N3771, 2N3772

Unit

Thermal Resistance, Junction to case

j-c

1.17

°C/W

Thermal Characteristics