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2SA1979S 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1979S 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Silicon PNP Power Transistor 2SA1979S www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -32V(Min) · SOT-23 Package APPLICATIONS · General Electronic Equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -500 mA PC Collector Power Dissipation 350 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI T V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA, IB= 0A -32 -- -- V ICBO Collector-Base Cut-Off Current VCB= -40V, IE= 0A -- -- -0.1 uA IEBO Emitter Cuto-ff Current VEB= -5V, IC= 0A -- -- -0.1 uA hFE* DC Current Gain IC= -100mA, VCE= -1V 70 -- 240 VCE(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -- -- -0.25 V hFE* Rank: O: 70-140, Y: 120-240 |
类似零件编号 - 2SA1979S |
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类似说明 - 2SA1979S |
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