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APT40N60JCU2 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 APT40N60JCU2
功能描述  SiC N-Channel MOSFET
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

APT40N60JCU2 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  APT40N60JCU2 Datasheet HTML 1Page - Inchange Semiconductor Company Limited APT40N60JCU2 Datasheet HTML 2Page - Inchange Semiconductor Company Limited APT40N60JCU2 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCFM8117
eq APT40N60JCU2
SiC N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.43
℃
/W
Rth j-c
Thermal Resistance, Junction to Diode
1.21
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0, ID= 1mA
600
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 600V, VGS= 0
--
--
25
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V, VDS= 0
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= 1mA
2.1
3.0
3.9
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V, ID= 20A
--
--
70
mΩ
VSD
Forward On-Voltage
IS= 60A, VGS= 0
--
3.85
--
V
CHOPPER DIODE RATINGS AND CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VF
Diode Forward Voltage
IF=30A,TJ=25℃
--
1.6
1.8
V
IF= 60A,TJ=25℃
--
1.9
--
IF=30A,TJ=125℃
--
1.4
--
IRM
Maximum Reverse Leakage Current
VR=600V,TJ=25℃
--
--
250
uA
VR=600V,TJ=125℃
--
--
500



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