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TN2540-12G 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TN2540-12G 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc Thyristors TN2540-12G www.iscsemi.com 1 FEATURES · Max. Blocking Voltage= VDRM, VRRM= 1200 V · IGT Maximum = 40 mA · Available in SMD D2PAK with Anode in Backside APPLICATIONS · Wind Renewable Energy Inverters · Battery Charge · Uninterruptible Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive Peak Off-state Voltage 1200 V VRRM Repetitive Peak Off-state Voltage 1200 V IT(RMS) Non Repetitive Surge Peak On-state Current (180° Conduction Angle, Tc= 102℃) 25 A IT(AV) Average on-state current (180° Conduction Angle, Tc= 102℃) 16 A ITSM Non-repetitive Peak On-state Current, 1 full cycle tp= 8.3ms 314 A tp= 10ms 300 A I2t I2t Value for Fusing, tp= 10ms 450 A2S PG(AV) Average Gate Power Dissipation 1 W di/dt Repetitive Rate of Rise of On-state Current after Triggering (f= 60Hz) 50 A/us IGM Peak Gate Current, tp= 20us 4 A TJ Operating Junction Temperature -40~+125 ℃ Tstg Storage Temperature -40~+150 ℃ |
类似零件编号 - TN2540-12G |
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类似说明 - TN2540-12G |
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