IRF520 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	IRF520

功能描述	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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制造商	STMICROELECTRONICS [STMicroelectronics]

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IRF520

IRF520FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

s

TYPICAL RDS(on) = 0.23

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

175

oC OPERATING TEMPERATURE

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

1

2

3

TO-220

ISOWATT220

June 1993

TYPE

VDSS

R DS(on)

ID

IRF520

IRF520FI

100 V

<0. 27

Ω

<0. 27

Ω

10 A

7A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

IRF520

I RF520FI

VDS

Drain-source Voltage (VGS =0)

100

V

VDG R

Drain- gate Voltage (RGS =20 k

Ω)100

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (cont .) at Tc =25

oC10

7

A

ID

Drain Current (cont .) at Tc =100

oC7

5

A

IDM(

•)

Drain Current (pulsed)

40

A

Ptot

Total Dissipation at Tc =25

oC70

35

W

Derating Factor

0. 47

0. 23

W/

oC

VISO

I nsulat ion Withstand Voltage (DC)



2000

V

Tstg

St orage Temperat ure

-65 to 175

oC

Tj

Max. Operat ing Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

1

2

3

1/9

类似零件编号 - IRF520

制造商	部件名	数据表	功能描述
Supertex, Inc	IRF520	74Kb / 2P	N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs
Fairchild Semiconductor	IRF520	166Kb / 5P	N-Channel Power MOSFETs, 11 A, 60-100 V
Intersil Corporation	IRF520	69Kb / 7P	9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET November 1999
Vishay Siliconix	IRF520	135Kb / 8P	Power MOSFET 16-Jun-08
New Jersey Semi-Conduct...	IRF520	798Kb / 3P	IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

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类似说明 - IRF520

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STMicroelectronics	BUZ72A	112Kb / 7P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Jun-1993
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