IRF540 datasheet(1/6 Pages) STMICROELECTRONICS

部件名	IRF540

功能描述	N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET

PDF	6 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 6 page

IRF540

IRF540FI

N - CHANNEL100V - 00.50

Ω - 30A - TO-220/TO-220FI

POWER MOSFET

s

TYPICAL RDS(on) = 0.050

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

175

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

DC-DC & DC-AC CONVERTER

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMP DRIVERS Etc.)

INTERNAL SCHEMATIC DIAGRAM

April 1998

TO-220

TO-220FI

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

IRF530

IRF 530FI

VDS

Drain-source Volt age (VGS =0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C30

17

A

ID

Drain Current (continuous) at Tc =100

oC21

12

A

IDM(

•)

Drain Current (pulsed)

120

A

Ptot

Tot al Dissipation at Tc =25

oC150

45

W

Derating F act or

1

0.3

W/

oC

Viso

Insulat ion Withstand Volt age (DC)

-

2000

V

Tstg

Storage T emperat ure

-65 to 175

oC

Tj

Max. O perating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤30 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

IRF540

I RF540F I

100 V

<0.077

Ω

<0.077

Ω

30 A

16 A

1/6

类似零件编号 - IRF540

制造商	部件名	数据表	功能描述
NXP Semiconductors	IRF540	86Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
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