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IRF620 数据表(PDF) 3 Page - STMicroelectronics

部件名 IRF620
功能描述  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

IRF620 数据表(HTML) 3 Page - STMicroelectronics

  IRF620 Datasheet HTML 1Page - STMicroelectronics IRF620 Datasheet HTML 2Page - STMicroelectronics IRF620 Datasheet HTML 3Page - STMicroelectronics IRF620 Datasheet HTML 4Page - STMicroelectronics IRF620 Datasheet HTML 5Page - STMicroelectronics IRF620 Datasheet HTML 6Page - STMicroelectronics IRF620 Datasheet HTML 7Page - STMicroelectronics IRF620 Datasheet HTML 8Page - STMicroelectronics IRF620 Datasheet HTML 9Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =100 V
ID =3 A
RG =50
Ω
VGS =10 V
(see test circuit)
30
70
135
45
45
100
190
65
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID =6 A
VGS =10 V
VDD = Max Rating x 0.8
(see test circuit)
20
6
8
30
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
6
24
A
A
VSD (
∗)
Forward On Volt age
ISD =6 A
VGS =0
1.5
V
trr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD =6 A
di/ dt =100 A/
µs
VDD = 100 V Tj = 150
oC
170
1
ns
µC
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
IRF620/FI
3/9



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