IRF630 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	IRF630

功能描述	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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IRF630

IRF630FP

N - CHANNEL 200V - 0.35

Ω - 9A - TO-220/FP

MESH OVERLAY

™ MOSFET

s

TYPICAL RDS(on) = 0.35

Ω

s

EXTREMELY HIGH dV/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using he

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

February 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

IRF630

IRF630F P

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC

9

9(**)

A

ID

Drain Current (continuous) at Tc =100

oC5.7

5.7(**)

A

IDM (

•)

Drain Current (pulsed)

36

A

Ptot

T otal Dissipat ion at Tc =25

oC75

25

W

Derating Factor

0.6

0.20

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

VISO

I nsulation W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 9A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

(**) Limited only by Maximum Temperature Allowed

TYPE

VDSS

RDS(on)

ID

IRF630

IRF630F P

200 V

<0.40

Ω

<0.40

Ω

9A

1/9

类似零件编号 - IRF630

制造商	部件名	数据表	功能描述
NXP Semiconductors	IRF630	97Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
Fairchild Semiconductor	IRF630	177Kb / 6P	N-Channel Power MOSFETs, 12A, 150-200 V
Intersil Corporation	IRF630	62Kb / 7P	9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs June 1999
International Rectifier	IRF630	176Kb / 6P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
STMicroelectronics	IRF630	190Kb / 6P	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

More results

类似说明 - IRF630

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF630S	85Kb / 8P	N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET Dec-1998
	IRF640	107Kb / 9P	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET Oct-1999
	IRF640S	84Kb / 8P	N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET Sep-1999
	STP40NS15	114Kb / 6P	N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY™ MOSFET Oct-2000
	STP6NS25	266Kb / 8P	N-CHANNEL 250V - 0.9ohm - 6A TO-220 MESH OVERLAY™MOSFET November 2002
	IRF630M	343Kb / 9P	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET Oct-2001
	IRF640T	247Kb / 12P	N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY??Power MOSFET 06-Oct-2006
	STB19NF20	535Kb / 16P	N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET 16-Feb-2007
	IRF630	336Kb / 14P	N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET 03-Aug-2006
	IRF630M	326Kb / 14P	N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET 28-Jun-2006

More results

IRF630 数据表(PDF) 1 Page - STMicroelectronics

IRF630 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - IRF630

类似说明 - IRF630

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IRF630 数据表(PDF) 1 Page - STMicroelectronics

IRF630 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - IRF630

类似说明 - IRF630

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