IRF630S datasheet(1/8 Pages) STMICROELECTRONICS

部件名	IRF630S

功能描述	N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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IRF630S

N - CHANNEL 200V - 0.35

Ω -9A - D2PAK

MESH OVERLAY

™ MOSFET

s

TYPICAL RDS(on) = 0.35

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

December 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC9

A

ID

Drain Current (continuous) at Tc =100

oC5.7

A

IDM (

•)

Drain Current (pulsed)

36

A

Ptot

T otal Dissipat ion at Tc =25

oC70

W

Derating Factor

0.56

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 9A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

IRF630S

200 V

< 0.40

Ω

9A

1

3

D

2PAK

TO-263

(suffix ”T4”)

1/8

类似零件编号 - IRF630S

制造商	部件名	数据表	功能描述
NXP Semiconductors	IRF630S	97Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
TRANSYS Electronics Lim...	IRF630S	142Kb / 1P	Power MOSFET
Vishay Siliconix	IRF630S	175Kb / 9P	Power MOSFET 30-May-11
Guangdong Kexin Industr...	IRF630S	1Mb / 4P	N-Channel MOSFET
New Jersey Semi-Conduct...	IRF630S	923Kb / 3P	N-channel TrenchMOS transistor

More results

类似说明 - IRF630S

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF630	104Kb / 9P	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET Feb-1999
	STB16NS25	456Kb / 9P	N-CHANNEL 250V - 0.23ohm - 16A D2PAK MESH OVERLAY™ MOSFET Feb-2003
	STB40NS15	289Kb / 7P	N-CHANNEL 150V - 0.042Ω - 40A D2PAK MESH OVERLAY™ MOSFET Dec-2001
	STB8NS25	427Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A D2PAK MESH OVERLAY™ MOSFET Jul-2001
	STD7NS20	319Kb / 8P	N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY™ MOSFET Jun-2003
	IRF630M	343Kb / 9P	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET Oct-2001
	IRF630	336Kb / 14P	N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET 03-Aug-2006
	IRF630M	326Kb / 14P	N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET 28-Jun-2006
	STD5N20	257Kb / 8P	N-CHANNEL 200V - 0.6W - 5A DPAK MESH OVERLAY??MOSFET Dec-2000
	STB16NS25T4	474Kb / 9P	N-CHANNEL 250V - 0.23W - 16A D2PAK MESH OVERLAY??MOSFET Feb-2003