IRF634 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	IRF634

功能描述	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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July 2001

IRF634

IRF634FP

N-CHANNEL 250V - 0.38

Ω - 8A TO-220/TO-220FP

MESH OVERLAY™ MOSFET

s

TYPICAL RDS(on) = 0.38 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

s

IDEAL FOR MONITOR’s B+ FUNCTION

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

IRF634

IRF634FP

250 V

< 0.45

Ω

< 0.45

Ω

8 A

Symbol

Parameter

Value

Unit

IRF634

IRF634FP

VDS

Drain-source Voltage (VGS = 0)

250

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

250

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

8

8(*)

A

ID

Drain Current (continuos) at TC = 100°C

5

5(*)

A

IDM (q)

Drain Current (pulsed)

32

32(*)

A

PTOT

Total Dissipation at TC = 25°C

80

30

W

Derating Factor

0.64

0.24

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX

(*)Limited only by maximum temperature allowed

INTERNAL SCHEMATIC DIAGRAM

TO-220

1

2

3

1

2

3

TO-220FP

类似零件编号 - IRF634

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	IRF634	224Kb / 7P	Advanced Power MOSFET
International Rectifier	IRF634	171Kb / 6P	Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
Vishay Siliconix	IRF634	1Mb / 8P	Power MOSFET 07-Jul-08
Inchange Semiconductor ...	IRF634	128Kb / 1P	N-channel mosfet transistor
STMicroelectronics	IRF634	326Kb / 14P	N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET 28-Jun-2006

More results

类似说明 - IRF634

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF640	107Kb / 9P	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET Oct-1999
	STB8NS25	427Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A D2PAK MESH OVERLAY™ MOSFET Jul-2001
	STD8NS25	122Kb / 6P	N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY™ MOSFET Jul-2001
	STP16NS25	330Kb / 9P	N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET May-2002
	STP22NS25Z	449Kb / 10P	N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY™ MOSFET Jan-2002
	STP6NS25	266Kb / 8P	N-CHANNEL 250V - 0.9ohm - 6A TO-220 MESH OVERLAY™MOSFET November 2002
	STP8NS25	329Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET Apr-2001
	IRF630M	343Kb / 9P	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET Oct-2001
	IRF630M	326Kb / 14P	N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET 28-Jun-2006
	IRF-634	326Kb / 14P	N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET 28-Jun-2006

More results

IRF634 数据表(PDF) 1 Page - STMicroelectronics

IRF634 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - IRF634

类似说明 - IRF634

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IRF634 数据表(PDF) 1 Page - STMicroelectronics

IRF634 数据表(HTML) 1 Page - STMicroelectronics

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类似说明 - IRF634

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