IRF640 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	IRF640

功能描述	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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IRF640

IRF640FP

N - CHANNEL 200V - 0.150

Ω - 18A TO-220/TO-220FP

MESH OVERLAY

™ MOSFET

s

TYPICAL RDS(on) = 0.150

Ω

s

EXTREMELY HIGH dV/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using he

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

IRF640

I RF 640F P

VDS

Drain-source Voltage (VGS =0)

200

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC

18

18(**)

A

ID

Drain Current (continuous) at Tc =100

oC

11

11(**)

A

IDM (

•)

Drain Current (pulsed)

72

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derating Factor

1.0

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

5

V/ns

VISO

Insulation Withstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

(**) Limited only by Maximum Temperature Allowed

TYPE

VDSS

RDS(on)

ID

IRF640

IRF640FP

200 V

<0. 18

Ω

<0. 18

Ω

18 A

1/9

类似零件编号 - IRF640

制造商	部件名	数据表	功能描述
NXP Semiconductors	IRF640	95Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
Fairchild Semiconductor	IRF640	140Kb / 5P	N-Channel Power MOSFETs, 18A, 150-200V
	IRF640	132Kb / 7P	18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
	IRF640	916Kb / 10P	200V N-Channel MOSFET
International Rectifier	IRF640	178Kb / 6P	Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

More results

类似说明 - IRF640

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF630	104Kb / 9P	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET Feb-1999
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