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Copyright © 2007 Active-Semi, Inc.

ACT4075

Rev PrA, 13-Aug-07

PARAMETER

VALUE

UNIT

IN to G

-0.3 to +34

V

EN to G

V

BS to SW

-0.3 to +8

V

FB, COMP to G

-0.3 to 6

V

Continuous SW Current

Internally limited

A

46

°C/W

Maximum Power Dissipation

1.8

W

Operating Junction Temperature

-40 to 150

°C

Storage Temperature

-55 to 150

°C

Lead Temperature (Soldering, 10 sec)

300

°C

SW to G

V

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Input Voltage

4.5

32

V

Feedback Voltage

1.198 1.222 1.246

V

High-Side Switch On Resistance

100

mΩ

Low-Side Switch On Resistance

10

Ω

SW Leakage

0

10

µA

Current Limit

3.5

5

A

COMP to Current Limit Transcon-

ductance

Δ

3

A/V

Error Amplifier Transconductance

Δ

550

µA/V

Error Amplifier DC Gain

4000

V/V

Switching Frequency

340

410

490

kHz

Short Circuit Switching Frequency

40

kHz

Maximum Duty Cycle

90

%

Minimum Duty Cycle

0

%

Enable Threshold Voltage

Hysteresis = 0.1V

0.7

1

1.3

V

Enable Pull Up Current

nected

2

µA

Supply Current in Shutdown

6

20

µA

IC Supply Current in Operation

0.85

2

mA

Thermal Shutdown Temperature

Hysteresis = 10°C

160

°C



: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may

affect device reliability.