IRF640S datasheet(1/8 Pages) STMICROELECTRONICS

部件名	IRF640S

功能描述	N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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IRF640S

N - CHANNEL 200V - 0.150

Ω - 18A TO-263

MESH OVERLAY

™ MOSFET

s

TYPICAL RDS(on) = 0.150

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using he

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

September 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC18

A

ID

Drain Current (continuous) at Tc =100

oC11

A

IDM (

•)

Drain Current (pulsed)

72

A

Ptot

T otal Dissipat ion at Tc =25

oC

125

W

Derating Factor

1.0

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

IRF640S

200 V

< 0.18

Ω

18 A

1

3

D

2PAK

TO-263

(suffix ”T4”)

1/8

类似零件编号 - IRF640S

制造商	部件名	数据表	功能描述
NXP Semiconductors	IRF640S	95Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
International Rectifier	IRF640S	228Kb / 10P	Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
Vishay Siliconix	IRF640S	2Mb / 8P	Power MOSFET 07-Jul-08
Vishay Siliconix	IRF640S	237Kb / 10P	Power MOSFET 18-Jan-16
Inchange Semiconductor ...	IRF640S	286Kb / 2P	isc N-Channel MOSFET Transistor 2023-8-23

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