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IRF740 数据表(PDF) 1 Page - STMicroelectronics |
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IRF740 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() IRF740 N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.48 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ® INTERNAL SCHEMATIC DIAGRAM October 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it VDS Drain-source Voltage (VGS =0) 400 V VDGR Drain- gate Volt age (RGS =20 k Ω) 400 V VGS G ate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 oC10 A ID Drain Current (continuous) at Tc =100 oC6.3 A IDM ( •) Drain Current (pulsed) 40 A Ptot T otal Dissipation at Tc =25 oC125 W Derating Factor 1.0 W / o C dv/dt (1) Peak Diode Recovery volt age slope 4.0 V/ns Tstg Storage Temperat ure -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤10 A, di/dt ≤120 Α/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet TYPE VDSS RDS(on) ID IRF740 400 V < 0. 55 Ω 10 A 1 2 3 TO-220 1/8 |
类似零件编号 - IRF740 |
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类似说明 - IRF740 |
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