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US3881ESE 数据表(PDF) 5 Page - Melexis Microelectronic Systems |
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US3881ESE 数据表(HTML) 5 Page - Melexis Microelectronic Systems |
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5 / 11 page ![]() US3881 Hall Latch Low Voltage & High Sensitivity 3901003881 Page 5 of 11 Data Sheet Rev 014 Feb/06 9 Detailed General Description Based on mixed signal CMOS technology, Melexis US3881 is a Hall-effect device with high magnetic sensitivity. This multi-purpose latch suits most of the application requirements. The chopper-stabilized amplifier uses switched capacitor techniques to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics and enables faster and more precise design. The operating voltage from 2.2V to 18V, low current consumption and large choice of operating temperature range according to “L”, “K” and “E” specification make this device suitable for automotive, industrial and consumer low voltage applications. The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up resistor tied between a pull-up voltage and the device output. 10 Unique Features The US3881 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to operate properly. SE package - Latch characteristic UA package - Latch characteristic The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with equivalent strength and opposite direction drive the output high and low. Removing the magnetic field (B→0) keeps the output in its previous state. This latching property defines the device as a magnetic memory. A magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal value. This hysteresis prevents output oscillation near the switching point. |
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