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IRF830 数据表(PDF) 1 Page - STMicroelectronics |
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IRF830 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() IRF830 N - CHANNEL 500V - 1.35 Ω - 4.5A - TO-220 PowerMESH ™ MOSFET s TYPICAL RDS(on) = 1.35 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ® INTERNAL SCHEMATIC DIAGRAM August 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t VDS Drain-source Volt age (VGS =0) 500 V VDGR Drain- gate Voltage (RGS =20 k Ω) 500 V VGS Gat e-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 o C4.5 A ID Drain Current (continuous) at Tc =100 oC2.9 A IDM( •) Drain Current (pulsed) 18 A Ptot Tot al Dissipation at Tc =25 oC100 W Derating F act or 0.8 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ ns Tstg Storage T emperat ure -65 to 150 oC Tj Max. O perating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 4.5A, di/dt ≤ 75 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet TYPE VDSS RDS(on) ID IRF830 500 V < 1.5 Ω 4.5 A 1 2 3 TO-220 1/8 |
类似零件编号 - IRF830 |
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类似说明 - IRF830 |
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