IRFBC30 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	IRFBC30

功能描述	N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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IRFBC30

N - CHANNEL 600V - 1.8

Ω - 3.6A - TO-220

PowerMESH

™ ΙΙ MOSFET

s

TYPICAL RDS(on) = 1.8

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™ ΙΙ is the evolution of the first

generation of MESH OVERLAY

™ . The layout

refinements

introduced

greatly

improve

the

Ron*area figure of merit while keeping the device

at the leading edge for what concerns switching

speed, gate charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

®

INTERNAL SCHEMATIC DIAGRAM

January 2000

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

600

V

VGS

G ate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC3.6

A

ID

Drain Current (continuous) at Tc =100

oC2.3

A

IDM (

•)

Drain Current (pulsed)

14

A

Ptot

T otal Dissipation at Tc =25

oC75

W

Derating Factor

0.6

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

3

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

IRFBC30

600 V

< 2.2

Ω

3.6 A

1

2

3

TO-220

1/8

类似零件编号 - IRFBC30

制造商	部件名	数据表	功能描述
International Rectifier	IRFBC30	173Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
Vishay Siliconix	IRFBC30	780Kb / 8P	Power MOSFET 16-Jun-08
Inchange Semiconductor ...	IRFBC30	328Kb / 2P	iscN-Channel MOSFET Transistor
List of Unclassifed Man...	IRFBC30	2Mb / 31P	SEMICONDUCTORS
Vishay Siliconix	IRFBC30	943Kb / 9P	Power MOSFET 16-Aug-2021

More results

类似说明 - IRFBC30

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF730	94Kb / 8P	N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET Aug-1998
	IRFBC40	92Kb / 8P	N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET Aug-1998
	STGP10NB60S	85Kb / 8P	N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP12NB60H	87Kb / 8P	N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP12NB60HD	409Kb / 9P	N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT Jul-2003
	STGP20NB60K	42Kb / 6P	N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT Jun-2000
	STGP3NB60H	87Kb / 8P	N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP7NB60H	86Kb / 8P	N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT Jun-1999
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	STP9NB60	108Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET Jan-2000