IRFBC40 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	IRFBC40

功能描述	N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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IRFBC40

N - CHANNEL 600V - 1.0

Ω - 6.2 A - TO-220

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.0

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

®

INTERNAL SCHEMATIC DIAGRAM

August 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

600

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

600

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C2

A

ID

Drain Current (continuous) at Tc =100

oC3.9

A

IDM(

•)

Drain Current (pulsed)

25

A

Ptot

Tot al Dissipation at Tc =25

oC125

W

Derating F act or

1.0

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

3

V/ ns

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 6.2 A, di/dt ≤ 80 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

IRFBC40

600 V

< 1.2

Ω

6.2 A

1

2

3

TO-220

1/8

类似零件编号 - IRFBC40

制造商	部件名	数据表	功能描述
Intersil Corporation	IRFBC40	55Kb / 7P	6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRFBC40	97Kb / 8P	Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)
Harris Corporation	IRFBC40	66Kb / 7P	6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Vishay Siliconix	IRFBC40	590Kb / 8P	Power MOSFET 16-Jun-08
Kersemi Electronic Co.,...	IRFBC40	2Mb / 7P	Power MOSFET

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类似说明 - IRFBC40

制造商	部件名	数据表	功能描述
STMicroelectronics	IRFBC30	85Kb / 8P	N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET Jan-2000
	STGP10NB60S	85Kb / 8P	N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP12NB60H	87Kb / 8P	N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP12NB60HD	409Kb / 9P	N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT Jul-2003
	STGP20NB60H	86Kb / 8P	N-CHANNEL 20A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP20NB60K	42Kb / 6P	N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT Jun-2000
	STGP3NB60H	87Kb / 8P	N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP7NB60H	86Kb / 8P	N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT Jun-1999
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	STP9NB60	108Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET Jan-2000