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IRFP250 数据表(PDF) 2 Page - STMicroelectronics

部件名 IRFP250
功能描述  N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

IRFP250 数据表(HTML) 2 Page - STMicroelectronics

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IRFP250
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.66
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.1
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
33
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
600
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
200
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
23
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 16A
0.073
0.085
Ω
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS =10V
33
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 16A
10
25
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2850
pF
Coss
Output Capacitance
420
pF
Crss
Reverse Transfer
Capacitance
120
pF



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