IRFP450 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	IRFP450

功能描述	N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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IRFP450

N - CHANNEL 500V - 0.33

Ω - 14A - TO-247

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.33

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

August 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

500

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

500

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C14

A

ID

Drain Current (continuous) at Tc =100

oC8.7

A

IDM(

•)

Drain Current (pulsed)

56

A

Ptot

Tot al Dissipation at Tc =25

oC190

W

Derating F act or

1.5

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

3.5

V/ ns

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤14 A, di/dt ≤ 130 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

I RFP450

500 V

< 0.4

Ω

14 A

1

2

3

TO-247

1/8

类似零件编号 - IRFP450

制造商	部件名	数据表	功能描述
Samsung semiconductor	IRFP450	212Kb / 5P	N-CHANNEL POWER MOSFETS
Intersil Corporation	IRFP450	55Kb / 7P	14A, 500V, 0.400 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRFP450	169Kb / 6P	Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
IXYS Corporation	IRFP450	46Kb / 2P	Standard Power MOSFET - N-Channel Enhancement Mode
Vishay Siliconix	IRFP450	1Mb / 8P	Power MOSFET 16-Jun-08

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