KBMFxxSC6

3/8

50

Ω

RF IN

Vg

50

TEST BOARD

Fig. A1: Measurements configuration

1

10

100

1000

-40

-30

-20

-10

0

F (MHz)

Insertion loss (dB)

Fig. A2: KBMFxxSC6 attenuation curve

TECHNICAL INFORMATION

The KBMFxxSC6 ensure a filtering protection against ElectroMagnetic and RadioFrequency Interferences

thanks to its low-pass filter structure. This filter is characterized by the following parameters :

- cut-off frequency

- Insertion loss

- high frequency rejection

EMI FILTERING

The KBMFxxSC6 is particularly optimized to perform ESD protection. ESD protection is based on the use

of device which clamps at :

Vouput

V

R I

BR

d

PP

=+

.

This protection function is splitted in 2 stages. As shown in figure A3, the ESD strikes are clamped by the

first stage S1 and then its remaining overvoltage is applied to the second stage through the resistor R.

Such a configuration makes the output voltage very low at the Voutput level.

ESD PROTECTION

ESD Surge

Vinput

Voutput

Rload

Rg

Rs

S1

Rd

V

BR

V

BR

V

PP

Device

to be

protected

KBMFxxSC6

Rd

S2

Fig. A3: ESD clamping behavior