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10B1 数据表(PDF) 2 Page - STMicroelectronics |
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10B1 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() ITA6V5B1 / ITA10B1 / ITA18B1 / ITA25B1 2/5 Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient C Junction capacitance ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter Value Unit PPP Peak pulse power dissipation (8/20 µs) (see note 1) Tj initial = Tamb 300 W IPP Peak pulse current (8/20 µs) (see note 1) Tj initial = Tamb 40 A I 2t Wire I 2t value (see note 1) 0.6 A 2s Tstg Tj Storage temperature range Maximum operating junction temperature -55to+150 125 °C °C TL Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) 100 50 0 20 s t %I pp 8s Pulse wave form 8/20 s Types IRM @VRM VBR @IR VCL @IPP VCL @IPP αTC max. min. 8/20 µs max. 8/20 µs max. max. note 2 note 2 note 2 note 3 µA V V mA VAVA 10 -4/°C pF ITA6V5B1 10 5 6.5 1 10 10 12 25 4 750 ITA10B1 4 8 10 1 15101925 8 570 ITA18B1 4 1518 1 25102825 9 350 ITA25B1 4 2425 1 3310382512 300 Note 2 : Between I/O pin and ground. Note 3 : Between two input Pins at 0V Bias,F=1 MHz. Preferred types in bold Note 1 : For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting. |
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