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L149 数据表(PDF) 3 Page - STMicroelectronics |
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L149 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() 3/6 L149 ELECTRICAL CHARACTERISTCS (Tj = 25 °C, VS = ± 16V) APPLICATION INFORMATION Figure 1. High slew-rate power operational amplifier (SR = 13V/ µs) Symbol Parameter Test Condition Min. Typ. Max. Unit VS Supply Voltage ± 20 V Id Quiescent Drain Current VS = ± 16V 30 mA Iin Input current VS = ± 16V; Vi = 0V 200 400 µA hFE DC current drain VS = ± 16V; IO = 3A 6000 10000 - GV Voltage gain VS = ± 16V; IO = 1.5A 1 - VCEsat Saturation voltage (for each transistor) IO = 3A 3.5 V VOS Input offset voltage VS = ± 16V 0.3 V VINH Inhibit input voltage (pins 1-3) ON condition ± 0.3 V OFF condition ± 1.8 V RINH Inhibit input resistance 2.0 K Ω SR Slew rate 30 V/ µs B Power bandwidth VO = ± 10V, d = 1%, RL = 8Ω 200 KHZ |
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