2SB1218AW datasheet(2/4 Pages) BILIN

部件名	2SB1218AW

功能描述	PNP Silicon Epitaxial Planar Transistor

PDF	4 Pages

Scroll/Zoom	100%

制造商	BILIN [Galaxy Semi-Conductor Holdings Limited]

网页	http://www.galaxycn.com

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2 / 4 page

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

2SB1218AW

Document number: BL/SSSTF034

www.galaxycn.com

Rev.A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA,IE=0

-45

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-2mA,IB=0

-45

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA,IC=0

-7

Collector cut-off current

ICBO

VCB=-20V,IE=0

-0.1

μA

Collector cut-off current

ICEO

VCB=-10V,IB=0

-100

μA

DC current gain

hFE

VCE=-10V,IC=-2mA

160

460

Collector-emitter saturation voltage VCE(sat)

IC=-100mA, IB=-10mA

-0.3

-0.5

Transition frequency

VCB=-10V, IE=1mA

f=200MHz

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

2.7

CLASSIFICANTION OF hFE

Rank

Range

160-260

210-340

290-460

marking

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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