FPD2000AS-EB datasheet(2/10 Pages) FILTRONIC

2 / 10 page

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

Datasheet v3.0

FPD2000AS

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

TEST CONDITIONS

ABSOLUTE MAXIMUM

Drain-Source Voltage

VDS

-3V < VGS < -0.5V

12V

Gate-Source Voltage

VGS

0V < VDS < +8V

-3V

Drain-Source Current

IDS

For VDS < 2V

IDSS

Gate Current

Forward / reverse current

+15/-2mA

RF Input Power

Under any acceptable bias state

29.5dBm

Channel Operating Temperature

TCH

Under any acceptable bias state

175°C

Storage Temperature

TSTG

Non-Operating Storage

-40°C to 150°C

Total Power Dissipation

PTOT

See De-Rating Note below

7.6W

Notes:

1 T

Ambient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause

permanent damage to the device; Users should avoid exceeding 80% of 2 or more Limits simultaneously

2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1

3 Total Power Dissipation defined as: P

TOT ≡ (PDC + PIN) – POUT,

where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power

Total Power Dissipation to be de-rated as follows above 22

°C:

PTOT= 7.6 - (0.05W/°C) x TPACK

where TPACK= source tab lead temperature above 22°C

(Coefficient of de-rating formula is the Thermal Conductivity)

Example: For a 55

°C carrier temperature: P

TOT = 7.6W – (0.05 x (55 – 22)) = 5.95W

5 For optimum heat sinking, metal-filled through (Source) via holes should be used directly below the central

metallized ground pad on the bottom of the package

6 Thermal Resistivity: The nominal value of 20

°C/W is measured with the package mounted on a large heatsink

with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the

Source leads

7 Operating at absolute maximum VD continuously is not recommended. If operation is considered then IDS must

be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted

to <-0.5V.

BIASING GUIDELINES:

•

Active bias circuits provide good performance stabilization over variations of operating

temperature, but require a larger number of components compared to self-bias or dual-biased.

Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,

otherwise the pHEMT may be induced to self-oscillate.

•

Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage

supply for depletion-mode devices such as the FPD2000AS.

•

The recommended 350mA bias point is nominally a Class AB mode. A small amount of RF gain

expansion prior to the onset of compression is normal for this operating point.

RECOMMENDED OPERATING BIAS CONDITIONS

•

Drain-Source Voltage:

From 5V to 10V

•

Quiescent Current:

From 25% IDSS to 55% IDSS

FPD2000AS-EB 数据表(PDF) 2 Page - Filtronic Compound Semiconductors

FPD2000AS-EB 数据表(HTML) 2 Page - Filtronic Compound Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10

数据表下载