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L3121B 数据表(PDF) 5 Page - STMicroelectronics |
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L3121B 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 7 page ![]() 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 5 10 15 20 25 30 35 40 I (A) TSM t(s) F=50H z Tj initial=25 °C Fig. 1: Surge peak current versus overload duration (typical values). 0.90 0.94 0.98 1.02 1.06 2.00 2.04 V[T ] V[T = 25 °C] BR amb BR amb -40 -20 0 20 40 60 80 T( °C) amb I= 1 mA R 85 Fig. 3: Typical relative variation of breakdown voltage versus ambient temperature. Fig. 4: Junction capacitance versus reverse applied voltage. -40 -20 0 20 40 60 80 85 0.70 0.85 1.0 1.15 1.30 1.45 I[T ] I[T = 25 °C] H amb H amb T( °C) amb Fig. 2: Typical relative variation of holding current versus ambient temperature. 25 50 75 100 125 1E+0 1E+1 1E+2 1E+3 1E+4 1E+5 Tj( °C) IR[Tj] / IR [Tj=25 °C] Fig. 5: Typical relative variation of leakage current versus ambient temperature. -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 0.90 0.95 1.00 1.05 1.10 Tamb( °C) Ipp[Tamb] / Ipp [25 °C] Fig. 6: Typical relative variation of peak pulse current (10/1000 µs) versus ambient temperature. L3121B 5/7 |
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