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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
12
11
10
4
5
6
1
2
3
9
8
7
NC
NC
NC
NC
RF OUT
RF IN
RF3395
GENERAL PURPOSE AMPLIFIER
The RF3395 is a general purpose, low-cost RF amplifier IC. The device is manufac-
tured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cascadable 50
Ω gain block.
Applications include IF and RF amplification in wireless voice and data communica-
tion products operating in frequency bands up to 6000MHz. The device is self-con-
tained with 50
Ω input and output impedances and requires only two external DC-
biasing elements to operate as specified. The device is designed for cost effective
high reliability in a plastic package. The 3mmx3mm footprint is compatible with
standard ceramic and plastic Micro-X packages.
Features
DC to >6000MHz Operation
Internally Matched Input and
Output
13.2dB Small Signal Gain
+28.7dBm Output IP3
+16.0dBm Output P1dB
Footprint Compatible with Micro-
X
Applications
Basestation Applications
Broadband, Low-Noise Gain
Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low-Power Applica-
tions
High Reliability Applications
RF3395
General Purpose Amplifier
RF3395PCBA-41X
Fully Assembled Evaluation Board
Rev A5 DS060908
RF3395Gen-
eral Purpose
Amplifier
RoHS Compliant & Pb-Free Product
Package Style: QFN, 12-Pin, 3 x 3