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RF3330 数据表(PDF) 2 Page - RF Micro Devices

部件名 RF3330
功能描述  IF GAIN CONTROLLED AMPLIFIER
PDF  10 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RF3330 数据表(HTML) 2 Page - RF Micro Devices

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RF3330
Rev A4 DS060908
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
7
V
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
Typical performance is at TA=+25°C, VCC=5V.
DC Specifications
Supply Voltage
4.75
5.0
5.25
V
Supply Current
18
25
mA
AGC Control Voltage
0.5
3.3
V
0.5V=Minimum Gain
3.3V=Maximum Gain
AGC Input Impedance
10
M
Ω
AC Specifications
3dB Bandwidth
150
MHz
Voltage Gain
Maximum
33.0
34.0
dB
VAGC=3.3V
Minimum
8.0
10.0
dB
VAGC=0.5V
Maximum Input Level
50
dBmV(rms)
While meeting distortion specification
Maximum Output Level
50
dBmV(rms)
While meeting distortion specification
Output 1dB Compression
66
dBmV(rms)
Maximum Gain
Output Harmonic Distortion
-44
-40
dBc
Output level=50dBmV(rms); VAGC=3.3V
Input IP3, Maximum Gain
45
dBmV(rms)
Output level=50dBmV(rms); VAGC=3.3V
Input IP3, Minimum Gain
60
dBmV(rms)
Output level=50dBmV(rms); VAGC=0.5V
Input Noise, Maximum Gain
4.5
nV/rtHz
Input Noise, Minimum Gain
42
nV/rtHz
Output Impedance
10
Ω
Differential
Input Impedance
2000
Ω
Differential
Output Load Impedance
1
k
Ω
Differential
Output Load Capacitance
2
pF
Differential
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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