L4938EPD datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

ELECTRICAL CHARACTERISTICS (Continued)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

ENABLE INPUT

VENL

Enable Input Low Voltage

(Output 2 Active)

-20

VENH

Enable Input High Voltage

1.4

VENhyst

Enable Hysteresis

IEN LOW

Enable Input Current Low

VEN = 0

-20

-8

-3

µA

IEN HIGH

Enable Input Current High

VEN = 1.1 to 7V; TJ < 130

°C;

-1

µA

VEN = 1.1 to 7V;

TJ = 130 to 150

°C;

-10

µA

RESET CIRCUIT

VRT

Reset Theresold Voltage

(note4)

RPR =

∞

4.5

VO1-0.3 VO1-0.2

RPR = 0

3.65

3.8

3.95

VRTH

Reset Theresold Hysteresis

RPR =

∞

120

tRD min

Reset Pulse Delay

CRES = 47nF; t r

≤ 30µs; (note 5)

100

tRD nom

Reset Pulse Delay

CRES = 47nF; (note 6)

100

140

tRR

Reset Reaction Time

CRES = 47nF

150

µs

ICT

Pull Down Capability of the

Discharge circuit

VOUT1 <VRT

ICT

Charge Current

VOUT1 >VRT

-1.3

-1

0.7

µA

VRESL

Reset Output Low Voltage

RRES = 10K

Ω to VOUT1

VOUT1

≥ 1.5V

0.4

VRESH

Reset Output High Leakage

current

VRES =5V

µA

SENSE COMPARATOR

VSI

Functional Range

-20

VSIT

Sense Threshold Voltage

Falling Edge; TJ <130

°C

1.08

1.16

1.24

Falling Edge; TJ <130 to 150

°C

1.05

1.16

1.29

VSITH

Sense Threshold Hysteresis

VSOL

Sense Output Low Voltage

V SI

≤ 1.05V; RSO =10KΩ

connected to 5V; VS

≥ 5V

0.4

ISOH

Sense Output Leakage

VSO = 5V; VSI

≥ 1.5V

µA

ISI HIGH

Sense Input Current High

VSI = 1.1 to 7V; TJ <130

°C-1

µA

VSI = 1.1 to 7V; TJ <130 to 150

°C

-10

µA

ISI LOW

Sense Input Current Low

VSI = 0V

-20

-8

-3

µA

Note :

4) The reset threshold can be programmed continuously from typ 3.8V to 4.7V by changing a value of an external resistor from pin PR to GN

5) This is a minimum reset time according to the hysteresis of the comparator. Delay time starts with VOUT1 exceeding VRT

6) This is the nominal reset time depending on the discharging limit of CT (saturation voltage) and theupper threshold of the timer comparator.

Delay time starts with VOUT1 exceeding VRT

7) The leakage of CT must be less than 0.5mA (2V). If an external resistor between CT and VOUT1 is applied, the leakage current may be

increased. The external resistor should have more than 30K

Ω.

for stability: Cs

≥ 1µF, C01 ≥ 10µF, C02 ≥ 10µF, ESR ≤ 5Ω (designed target) For details see application note.

8) For transients exceeding 20V or -20V external protection is required at the Pins SI and EN as shown at Pin EN. The protection proposed will

provide proper function for transients in the range of

±200V. If the zener diode is omitted the external resistor should be raised to 200KΩ

to limit the current to 1mA. Without the zener diode, the function 20V or -20V can not be guaran teed.

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