BUR52A datasheet(1/2 Pages) ISC

部件名	BUR52A

功能描述	Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

Silicon NPN Power Transistor

BUR52A

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 250V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 1.0V(Max) @IC= 25A

APPLICATIONS

· Switching Regulators

· Converters

· Power Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

350

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

60

A

ICM

Collector Current-Pulse

80

A

Ptot

Total Power Dissipation

@ TC=25℃

350

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.5

℃

/W

3

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