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RF2192
Rev A8 DS060918
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
V
DC
Supply Voltage (P
OUT ≤ 31 dBm)
+5.2
V
DC
Mode Voltage (V
MODE)+4.2
V
DC
Control Voltage (V
REG)+3.0
V
DC
Input RF Power
+10
dBm
Operating Case Temperature
-30 to +110
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Chondition
Min.
Typ.
Max.
Usable Frequency Range
400
960
MHz
High Power State-
US-CDMA (VMODE Low)
Case T=25°C, V
CC =3.4 V, V
REG= 2.85V,
VMODE=0V to 0.5V, Freq=824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Linear Gain
27
30
dB
Second Harmonic
-33
dBc
Third Harmonic
<-60
dBc
Maximum Linear Output Power
(CDMA Modulation)
29
dBm
Total Linear Efficiency
37
%
POUT=29dBm
Adjacent Channel Power Rejection
-48
-44
dBc
ACPR@885kHz
-58
-56
dBc
ACPR@1980kHz
Input VSWR
2:1
Output VSWR
10:1
No damage.
6:1
No oscillations. >-70dBc
Noise Power
-133
dBm/Hz
At 45MHz offset
Low Power State-
US-CDMA (VMODE High)
Case T=25°C, V
CC =3.4 V, V
REG=2.85V,
VMODE=1.8V to 3V, Freq=824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Linear Gain
19
22
dB
Second Harmonic
-33
dBc
Third Harmonic
<-60
dBc
Maximum Linear Output Power
(CDMA Modulation)
16
20
dBm
Max ICC
150
mA
POUT=+16dBm (all currents included)
Adjacent Channel Power Rejection
-48
-46
dBc
ACPR@885kHz
<-60
-58
dBc
ACPR@1980kHz
Input VSWR
2:1
Output VSWR
10:1
No damage.
6:1
No oscillations. >-70dBc
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.