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SC8723 数据表(PDF) 5 Page - SOUTHCHIP Semiconductor Technology

部件名 SC8723
功能描述  SC8723 High Efficiency, Synchronous, 3.5A Buck-Boost Converter with Four Integrated MOSFETs
PDF  6 Pages
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制造商  SOUTHCHIP [SOUTHCHIP Semiconductor Technology]
网页  https://www.southchip.com/en
标志 SOUTHCHIP - SOUTHCHIP Semiconductor Technology

SC8723 数据表(HTML) 5 Page - SOUTHCHIP Semiconductor Technology

  SC8723 Datasheet HTML 1Page - SOUTHCHIP Semiconductor Technology SC8723 Datasheet HTML 2Page - SOUTHCHIP Semiconductor Technology SC8723 Datasheet HTML 3Page - SOUTHCHIP Semiconductor Technology SC8723 Datasheet HTML 4Page - SOUTHCHIP Semiconductor Technology SC8723 Datasheet HTML 5Page - SOUTHCHIP Semiconductor Technology SC8723 Datasheet HTML 6Page - SOUTHCHIP Semiconductor Technology  
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SC8723 PRELIMINARY SPEC
SOUTHCHIP SEMICONDUCTOR
SOUTHCHIP CONFIDENTIAL, SUBJECT TO CHANGE
Copyright © 2021, Southchip Semiconductor Technology (Shanghai) Co., Ltd.
5
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
Unit
Voltage range at
terminals(2)
MODE, ILIM, COMP, FB, FREQ, VCC
-0.3
6
V
VIN, VOUT, SW1, SW2, EN
-0.3
28
V
SW1, SW2 for less than 10ns
-4
28
V
BT1 to SW1, BT2 to SW2
-0.3
6
V
TJ
Operating junction temperature range
-40
150
°C
Tstg
Storage temperature range
-65
150
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network ground terminal.
6.2 Thermal Information(TBD)
THERMAL RESISTANCE(1)
QFN-22 (3mmX3mm)
UNIT
θ
JA
Junction to ambient thermal resistance
TBD
°C/W
θ
JC
Junction to case resistance
TBD
°C/W
(1)
Measured on JESD51-7, 4-layer PCB.
6.3 Handling Ratings
PARAMETER
DEFINITION
MIN
MAX
UNIT
ESD(1)
Human body model (HBM) ESD stress voltage(2)
TBD
TBD
kV
Charged device model (CDM) ESD stress voltage(3)
TBD
TBD
V
(1)
Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic
discharges into the device.
(2)
Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM
allows safe manufacturing with a standard ESD control process.
(3)
Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250-V CDM allows
safe manufacturing with a standard ESD control process.
6.4 Recommended Operating Conditions
MIN
MAX
UNIT
VIN
VIN voltage range
2.7
24
V
VOUT
VOUT voltage range
3
22
V



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