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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
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2
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8
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5
EN1
RF OUT2
GND
RF OUT1
EN2
RF IN2
GND
RF IN1
RF2363
DUAL-BAND 3V LOW NOISE AMPLIFIER
The RF2363 is a dual-band Low Noise Amplifier designed for use as a front-end for
950MHz GSM/1850MHz DCS applications and may be used for dual-band cellu-
lar/PCS applications. The 900MHz LNA is a single-stage amplifier; the 1900MHz
LNA is a 2-stage amplifier. The part may also be tuned for applications in other fre-
quency bands. The device has an excellent combination of low noise figure and
high linearity at a very low supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
Features
Low Noise and High Intercept
Point
18dB Gain at 900MHz
21dB Gain at 1900MHz
Low Supply Current
Single 2.5V to 5.0V Power
Supply
Very Small SOT-23-8 Plastic
Package
Applications
GSM/DCS Dual-Band Hand-
sets
Cellular/PCS Dual-Band
Handsets
General Purpose Amplifica-
tion
Commercial and Consumer
Systems
RF2363
Dual-Band 3V Low Noise Amplifier
RF2363 PCBA
Fully Assembled Evaluation Board
Rev B3 DS040114
Package Style: SOT, 8-Lead
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