SDP04S60 datasheet(1/2 Pages) ISC

部件名	SDP04S60

功能描述	SiC Schottky Diode

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 2 page

ISCD7067

eq SDP04S60

SiC Schottky Diode

www.iscsemi.com

1

FEATURES

· Switching Behavior Benchmark

· No Reverse Recovery

· No Forward Recovery

APPLICATIONS

· Free Wheeling Diodes

· AC/DC Converters

· Switch Mode Power Supplies (SMPS)

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

Repetitisve Peak Reverse Voltage

600

V

IF

Continuous Forward Current

Tc= 100°C

4

A

IFRMS

RMS Forward Current

f= 50Hz

5.6

A

IFSM

Non-Repetitive Forward Surge

Current

Tc= 25°C, tp= 10ms, Sine Half Wave

12.5

A

Ptot

Power Dissipation

Tc= 25°C

36.5

W

TJ

Max. Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.1

℃

/W

1 2 3

类似零件编号 - SDP04S60

制造商	部件名	数据表	功能描述
Infineon Technologies A...	SDP04S60	280Kb / 9P	Silicon Carbide Schottky Diode 2004-02-11
	SDP04S60	800Kb / 10P	Silicon Carbide Schottky Diode Rev. 2.5 2008-06-02
	SDP04S60	800Kb / 10P	Silicon Carbide Schottky Diode Rev. 2.5 2008-06-02

More results

类似说明 - SDP04S60

制造商	部件名	数据表	功能描述
BASIC SEMICONDUCTOR	B1D06065F	1Mb / 7P	SiC Schottky Diode Rev. 2.3
	B1D06065KF	1Mb / 7P	SiC Schottky Diode Rev. 2.2
	B1D08065KS	604Kb / 7P	SiC Schottky Diode Rev. 0.1
	B1D10065E	2Mb / 7P	SiC Schottky Diode Rev. 1.2
	B1D10065F	820Kb / 7P	SiC Schottky Diode Rev. 1.2
	B1D10065H	1Mb / 7P	SiC Schottky Diode Rev. 2.4
	B1D10065K	1Mb / 7P	SiC Schottky Diode Rev. 2.2
	B1D12065K	1Mb / 7P	SiC Schottky Diode Rev. 1.3
	B1D15065K	1Mb / 7P	SiC Schottky Diode Rev. 1.4
	B1D30065HC	1Mb / 7P	SiC Schottky Diode Rev. 0.2