AD8675ARMZ-R2 datasheet(4/12 Pages) AD

4 / 12 page

AD8675

Rev. A | Page 4 of 12

VS = ±15 V, VCM = 0 V, VO = 0 V, TA = +25°C, unless otherwise specified.

Table 2.

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

VOS

μV

−40°C ≤ TA ≤ +125°C

240

Input Bias Current

−2

0.5

−40°C ≤ TA ≤ +125°C

−4.5

4.5

Input Offset Current

IOS

−1

0.1

−40°C ≤ TA ≤ +125°C

−2.8

0.1

2.8

Input Voltage Range

−13.5

13.5

Common-Mode Rejection Ratio

CMRR

VCM = −12.5 V to +12.5 V

114

130

−40°C ≤ TA ≤ +125°C

114

130

Open-Loop Gain

AVO

RL = 2 kΩ to ground,

1500

4000

V/mV

VO = −14.0 V to +14.0 V

−40°C ≤ TA ≤ +125°C

700

1700

V/mV

Offset Voltage Drift

ΔVOS/ΔT

−40°C ≤ TA ≤ +125°C

0.2

0.6

μV/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

SOIC RL: 2 kΩ to ground

14.75

14.8

MSOP RL: 2 kΩ to ground

14.67

14.78

SOIC −40°C ≤ TA ≤ +125°C

14.69

14.75

MSOP −40°C ≤ TA ≤ +125°C

14.3

14.66

Output Voltage Low

VOL

RL = 2 kΩ to ground

−14.85

−14.75

−40°C ≤ TA ≤ +125°C

−14.78

−14.69

Short-Circuit Limit

ISC

Output Current

±20

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = ±5.0 V to ±15.0 V

120

140

−40°C ≤ TA ≤ +125°C

120

140

Supply Current/Amplifier

ISY

VO = 0 V

2.5

2.9

−40°C ≤ TA ≤ +125°C

2.9

3.8

DYNAMIC PERFORMANCE

Slew Rate

RL =10 kΩ

2.5

V/μs

Gain Bandwidth Product

GBP

MHz

NOISE PERFORMANCE

Voltage Noise

en p-p

0.1 Hz to 10 Hz

0.1

μV p-p

Voltage Noise Density

f = 1 kHz

2.8

nV/√Hz

Current Noise Density

f = 10 Hz

0.3

pA/√Hz

AD8675ARMZ-R2 数据表(PDF) 4 Page - Analog Devices

AD8675ARMZ-R2 数据表(HTML) 4 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载

链接网址

AD8675ARMZ-R2 数据表(PDF) 4 Page - Analog Devices

AD8675ARMZ-R2 数据表(HTML) 4 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表 下载

链接网址

数据表下载