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L6123 数据表(PDF) 2 Page - STMicroelectronics

部件名 L6123
功能描述  100 V DMOS SWITCHES
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6123 数据表(HTML) 2 Page - STMicroelectronics

  L6123 Datasheet HTML 1Page - STMicroelectronics L6123 Datasheet HTML 2Page - STMicroelectronics L6123 Datasheet HTML 3Page - STMicroelectronics L6123 Datasheet HTML 4Page - STMicroelectronics L6123 Datasheet HTML 5Page - STMicroelectronics L6123 Datasheet HTML 6Page - STMicroelectronics L6123 Datasheet HTML 7Page - STMicroelectronics L6123 Datasheet HTML 8Page - STMicroelectronics L6123 Datasheet HTML 9Page - STMicroelectronics  
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BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage
100
V
VCC
Supply Voltage
60
V
ID
Continuous Drain Current @ Tpins =90
°C, POWERDIP
@Tcase =90
°C, MULTIWATT
1.5
3
A
A
IDM (*)
Pulsed Drain Current
POWERDIP
MULTIWAT T
5
8
A
A
ISD
Continuous Source-drain
@ Tpins =90
°C, POWERDIP
Diode Current
@ Tcase =90
°C, MULTIWATT
1.5
3
A
A
ISDM
Pulsed Source Drain Diode Current
POWERDIP
MULTIWATT
5
8
A
A
VIN
Input Voltage
7
V
VEN
Enable Voltage
7
V
VS
Source Voltage
– 1 to + 4
V
Ptot
Total Power Dissipation
@ Tpins =90
°C, POWERDIP
@Tcase =90
°C, MULTIWATT
@Tamb =70
°C, POWERDIP
@Tamb =70
°C, MULTIWATT
4.3
20
1.3
2.3
W
W
W
W
Tstg,Tj
Storage and Junction Temperature Range
– 40 to + 150
°C
(*) Pulse width
≤ 300 µs, duty cycle ≤ 10 %.
NOTE : ID,IDM,ISD,ISDM are given per channel.
THERMAL DATA
Symbol
Parameter
POWERDIP14+3+3
MULTIW ATT15
Unit
Rth j-pins
Thermal Resistance Junction-pins
Max.
14
-
oC/W
Rth j-case
Thermal Resistance Junction-case
Max.
-
3
oC/W
Rth j-amb
Thermal Resistance Junction-ambient
Max.
65
35
oC/W
L6122 - L6123
2/9



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